The IRENA project aims to develop high performance materials, i.e. both metallic and semiconducting single-walled carbon nanotube (SWCNT) thin films to completely eliminate the use of the critical metals in electronic devices:

  1. Indium in transparent conducting films (TCF, indium oxide doped by tin, ITO)
  2. Indium and Gallium as semiconductor In–Ga–Zn–O (a-IGZO) in thin film field effect transistors (TFTs)

The target values for fully flexible transparent electrodes based on SWCNTs are 10 ohms/sq at 90% transparency, i.e. comparable to ITO on glass. The applicability of the developed SWCNT films will be further demonstrated in the high-performance TFTs on flexible and transparent polymers (ION >1mA/mm, ION/IOFF >1E5) and in a 48 zone capacitive SWCNT touch sensor.

Because of the rich resource of carbon element, recycling is not needed and the film material supports an environment-friendly approach. Based on the fundamental understandings, the performance and reliability of SWCNT transparent conductors and TFTs will be improved in this project, so that they can be used in highly performing products in the long term, such as AMOLEDs and future flexible electron devices with very large commercial potential in future consumer electronics. The project contributes to reduce the European and Japanese electronics industries’ dependence on indium resources as well as the cost of manufacturing. Thus the project contributes to increase the competitiveness of the industry, especially to the SME’s developing novel flexible electronics products. The project involves 3 world class teams from both Europe and Japan, having complementary expertise in nanotube synthesis, thin film manufacturing and flexible device manufacturing, in addition to detailed modeling of nanotube growth and thin film charge transport processes.