The IRENA project aims to develop high performance materials, i.e. both metallic and semiconducting single-walled carbon nanotube (SWCNT) thin films, to replace critical metals in electronic devices:

  1. Indium in transparent conducting films (TCF, indium oxide doped by tin, ITO)
  2. Indium and Gallium as semiconductor In–Ga–Zn–O (a-IGZO) in thin film field effect transistors (TFTs).